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HOYA Corporation | 論文
- Ultrahigh-Vacuum Electron Cyclotron Resonance-Plasma Chemical-Vapor-Deposited SiN_x Films for X-Ray Lithography Mask Membrane : As-Deposited Properties and Radiation Stability
- X-Ray Lithography with a Wet-Silylated and Dry-Developed Resist
- Novel Evaluation System for Extreme Ultraviolet Lithography Resist in NewSUBARU
- Actinic Mask Inspection Using an EUV Microscope : Preparation of a Mirau Interferometer for Phase-Defect Detection
- An Improved Phased Array Ultrasonic Probe Using 0.91Pb(Zn_Nb_)O_3-0.09PbTiO_3 Single Crystal
- Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method
- Charge-State and Isotope Effects on the Recovery Process of Stress-Induced Reorientation of Pt-H_2 Complex in Silicon
- Consideration of Solvent Effect on Precipitation Polymerization of Poly(ether-ketone)s via Friedel-Craft Acylation
- Enhancement of Blue Emission from Mg-Doped GaN Using Remote Plasma Containing Atomic Hydrogen
- Observation of Long Relaxation from Fe^0(3d^8) to Fe^+(3d^7) by Electron Spin Resonance Measurement
- Pyroelectric Infrared Sensor Using Modified PbTiO_3 Ceramics
- Polymerization Behavior of Poly(ether ketone) via Friedel-Crafts Acylation Studied by End-Group Analysis with H NMR
- Synthesis of Thermally Cross-Linkable Fluorine-containing Poly(aryl ether ketone)s I. Phenylethynyl Terminated Poly(aryl ether ketone)s
- Stress-Induced Level Shift of a Hydrogen-Carbon Complex in Silicon : Semiconductors
- Synthesis of Novel Fluorine-Containing Poly(aryl ether nitrile)s Derived from 2,3,4,5,6-Pentafluorobenzonitrile
- Isotope Effects on the Dissociation of a Hydrogen-Carbon Complex in Silicon
- Metalorganic Chemical Vapor Deposition Growth of GaN Using a Split-flow Reactor
- Quantitation of Absorbers in Turbid Media Using Time-Integrated Spectroscopy Based on Microscopic Beer-Lambert Law
- Simple Subtraction Method for Determining the Mean Path Length Traveled by Photons in Turbid Media
- Electronically Induced Instability of a Hydrogen-Carbon Complex in Silicon and Its Dissociation Mechanism