スポンサーリンク
Graduate School of Engineering, Kansai University, Suita, Osaka 564-8680, Japan | 論文
- AgNO3-Dependent Morphological Change of Si Nanostructures Prepared by Single-Step Metal Assisted Etching Method
- Film Sensor Device Fabricated by a Piezoelectric Poly(L-lactic acid) Film
- Additional Electrochemical Treatment Effects on the Switching Characteristics of Anodic Porous Alumina Resistive Switching Memory
- Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
- Improvement of the Reproducibility of the Switching Voltage of Resistance Change Random Access Memory by Restricting Formation of Conductive Filaments
- Control of Crystal Orientation and Diameter of Silicon Nanowire Using Anodic Aluminum Oxide Template
- Formation and Evaluation of Electroless-Plated Barrier Films for High-Aspect-Ratio Through-Si Vias
- A Site-Exit Router Selection Method Using Routing Header in IPv6 Site Multihoming
- Virtual Continuous CWmin Control Scheme of WLAN
- Preparation of Ultrahigh-Density Magnetic Nanowire Arrays beyond 1 Terabit/Inch2 on Si Substrate Using Anodic Aluminum Oxide Template
- Morphology dependence of optical reflectance properties for a high-density array of silicon nanowires