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Frontier Collaborative Research Center Tokyo Institute Of Technology | 論文
- Improvement in the Output Characteristics of a Large-Bore Copper Vapor Laser by Hydrogen
- Effect of Microparticles on Acousto-Optic Diffraction in Water
- Raman-Nath Diffraction by Microparticles in Water
- Observation of Boundary Josephson Junction with d-Wave Pairing Characteristics
- Space-Charge-Limited Currents in La_2O_3 Thin Films Deposited by E-Beam Evaporation after Low Temperature Dry-Nitrogen Annealing
- Improved Data Disturbance Effects in 1T2C-Type Ferroelectric Memory Array
- Piezoelectric Characterization of Low-Temperature-Fired Pb(Zr, Ti)O_3-Pb(Ni, Nb)O_3 Ceramics
- Study of Valence State of the Manganese Ions in PbTiO_3 Ceramics by Means of ESR
- Neuronal Activity Topography 解析によるアルツハイマー病患者の推定
- Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell(Special Issue on Nonvolatile Memories)
- Theoretical Analysis of Effect of Domain Inversion Shape on Second Harmonic Generation Conversion Efficiencies of Quasi-Phase-Matched Nonlinear Optical Waveguide Devices
- Effect of Ultra-Clean Sputtering on Magnetoresistance and Thermal Stability of Magnetoresistance in Spin-Valves
- Underlayer Effect on Magneto-Resistance in Spin-Valves
- Properties of Basal-Plane-Faced Tilt Boundary Josephson Junction in YBCO Films
- A Possible Ground State and Its Electronic Structure of a Mother Material (LaOFeAs) of New Superconductors(Condensed matter : electronics structure and electrical, magnetic, and optical properties)
- Possible Polaron Effect in Complex Terahertz Conductivity of Electron-Doped Nanoporous Crystal 12CaO・7Al_2O_3(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Preparation of SrBi_2Ta_2O_9 Thin Films by Liquid-Delivery Metalorganic Chemical Vapor Deposition using a Double Alcoholate Source
- Ferroelectricity of YMnO_3 Thin Films on Pt(111)/Al_2O_3(0001) and Pt(111)/Y_2O_3(111)/Si(111) Structures Grown by Molecular Beam Epitaxy
- 植生評価に適したハイパースペクトル画像符号化法(画像・映像処理)
- Proposal of a Planar 8F^2 1T2C-Type Ferroelectric Memory Cell