スポンサーリンク
Faculty of Engineering Osaka University | 論文
- Methodology for Accurate Oxygen Distribution Analysis and Its Application to YBa_2Cu_3O_x Thin Films Using ^O(α, α)^O 3.045 MeV Resonance Reaction
- LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
- Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
- Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
- Deep Impurity Levels in InP LEC Crystals
- Bound Multiexciton Luminescence in Lithium-Doped Silicon
- Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
- Bandgap Energy of InGaAsP Quaternary Alloy
- Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
- Observation of Deep Impurity Levels in In_GA_As_P_
- Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics
- Temperature and Impurity-Concentration Dependence of the Exciton Two-Electron Luminescence from Phosphorus-Doped Silicon
- Differential Photovoltage Spectra of Au-GaAs_P_x Schottky-Barrier Diodes
- Lineshape Morphology in Modulation Spectroscopy (Selected Topics in Semiconductor Physics) -- (Modulation Spectroscopy)
- Optical Absorption Edge of Layer Compound InS Grown from In Melt
- Heat Conduction Analysis in Bodies Containing Thin-Walled Structures by Means of Hybrid BNM with an Application to CNT-Based Composites
- Calculation of Incident Angle Dependence of Ion-Induced Kinetic Electron Emission from Aluminum
- Direct Monte Carlo Simulation of Incident-Angle Dependence of Secondary Electron Emission from Aluminum
- A Monte Carlo Simulation of Ion-Induced Kinetic Electron Emission with a Stochastic Excitation of Electrons in Solids