スポンサーリンク
Electrotechnical Laboratory MITI | 論文
- Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by Atomic Force Microscopy Nano-Oxidation Process
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- Single Electron Memory at Romm Temperature: Experiment and Simulation
- Application of hybrid compliance / force control to super long distance teleoperation
- Electric Discharge Chemical Process in Removal of SO_2 and NO_X from Combustion Flue Gas by Pulsed Corona Discharge
- Si Metal Insulator Semiconductor Tunnel Emitter Transistor (Si MIS TET)
- Oxidation Using AFM and Subsequent Etching in Water of Inverted-Type δ-Doped HEMT
- Experimental and Simulated Results of Room Temperature Single Electron Transistor Formed by AFM Nano-Oxidation Process
- Room Temperature Operated Single Electron Transistor by STM Nano-Oxidation Process: Fabrication Process and Electrical Properties (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- 380fs Electrical Pulse Generation from 100nm Insulator-Gap Photoconductive Switches Fabricated by an Atomic Force Microscope