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Electronics And Telecommunications Res. Inst. Taejon Kor | 論文
- Oscillatory Behavior of Nonlocal Electrical Properties in Mesoscopic AlGaAs/GaAs Two-Dimensional Electron Gas Wire Structures
- Anomalous Magnetoresistance near Superconducting Transition Temperature in a Mesoscopic Aluminum Wire
- Dynamic Gain Equalized Hybrid Optical Amplifier Composed of Erbium Doped Fiber Amplifier and Semiconductor Optical Amplifier
- In Situ Infrared Study of Surface Oxide Formation on Gas-Evaporated Si Microcrystals
- A New Low-Resistance Antifuse with Planar Metal/Dielectric/Poly-Si/Dielectric/Metal Structure
- A New Low-Resistance Antifuse with Planar Metal/Dielectric/Poly-Si/Dielectric/Metal Structure
- A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures
- A New Fabrication Method of Silicon Field Emission Cathodes with Sub-halfmicron Gate Apertures
- Characterization and Removal of Trace Heavy Metal Contamination on Si-Surface Resulted from CHF_3/C_2F_6 Reactive Ion Etching
- Preparation of (Ba, Sr)TiO_3 Thin Films with High Pyroelectric Coefficients at Ambient Temperatures
- Effects of Implanted Materials on Impurity-Induced Layer Disordering in Strained Ga_In_As/Ga_xIn_As_yP_/Ga_In_P/GaAs Quantum Well Structure
- Ordering and Associated Domain Structures in Zinc and Silicon Doped Ga_In_P and Ga_xInAs_yP_ Layers Grown on GaAs by Metalorganic Vapour Phase Epitaxy
- Ellipsometric Study of Self-Assembled InAs/GaAs Quantum Dots
- Electrical Properties of Paraelectric (Pb_La_) TiO_3 Thin Films with High Linear Dielectric Permittivity: Schottky and Ohmic Contacts
- Crystal Structure and Microwave Dielectric Properties of CaTiO_3-(Li_N_)TiO_3-(Ln_Nd_)TiO_3 (Ln = La, Dy) Ceramics
- Theoretical Comparison of (111) and (100) GaAs/AlGaAs p-Type Quantum Well Infrared Photodetectors
- Superior Detectivity of (111) GaAs/AlGaAs p-Type QW Infrared Photodetector
- Radiation Torque Exerted on a Rotating Sphere in a Focused Gaussian Laser Beam : First-Order Correction in Angular Velocities
- A Generalization of Public Key Residue Cryptosystem
- Characterization of Aluminum Nitride Thin Films on Silicon Substrates Grown by Plasma Assisted Molecular Beam Epitaxy