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Electrical and Computer Engineering Department, University of California | 論文
- Enhancement of Luminous Efficacy by Random Patterning of Phosphor Matrix
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding
- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- 28aPS-18 c面およびa面GaNにおける励起子の緩和ダイナミクス(28aPS 領域5ポスターセッション,領域5(光物性))
- 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes
- Stimulated Emission at Blue-Green (480nm) and Green (514nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (1011) Bulk GaN Substrates
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
- Spiral Growth of InGaN Nanoscale Islands on GaN
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire