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Dow Corning Toray Silicone Co. Ltd. Chiba Jpn | 論文
- Effect of Heating SiH_4 on the Plasma Chemical Vapor Deposition of Hydrogenated Amorphous Silicon ( Plasma Processing)
- High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment
- Temperature Dependence of X_1-X_3 Splitting Energy in Lightly Doped GaP
- Band-Edge Shift and X_1-X_3 Absorption Depending on Donor Concentration in GaP
- Effects of Pixel Electrode Structure on Image Lag of STACK-CCD Image Sensor
- Hg-Sensitized Photochemical Vapor Depositiorn Application to Hydrogenated Amorphous Silicon Photoconversion Layer Overlaid on Charge Coupled Device
- Trimethylgallium Reactions on As-Stabilized and Ga-Stabilized GaAs(100) Surfaces
- KrF Excimer Laser Irradiation Effect on GaAs Atomic Layer Epitaxy
- GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
- UV Absorption Spectra of Adlayers of Trimethylgallium and Arsine
- Molecular Orientation of Polyimide Films for Liquid Crystal Alignment Studied by Infrared Dichroism