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Division of Electronics and Information Engineering Hokkaido University | 論文
- Full-Vector Analysis of Photonic Crystal Fibers by the Finite Element Method
- An Anisotropic PML for Finite Element Beam Propagation Analysis of Anisotropic Optical Waveguides
- FEM-Based Electromagnetic Wave Simulator Running on Some Platforms by Use of Java and a Commercial Tool(Analytical and Simulation Methods for Electromagnetic Wave Problems)
- FEM-Based Electromagnetic Wave Simulator Running on Some Platforms by Use of Java and a Commercial Tool
- Microwave Simulator Based on the Finite-Element Method by Use of Commercial Tools
- Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device
- Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode
- 3-Dimensional Beam Propagation Analysis of Nonlinear Optical Fibers (Special Issue on Optical Fibers and Their Applications)
- Full-Vector Analysis of Photonic Crystal Fibers Using the Finite Element Method(Special Issue on Optical Fibers and Devices)
- Enhancement of Nitrogen Gas Breakdown Voltage between Coated Aluminum Electrodes with Fluorocarbon Polymer Film Prepared in C_8F_ Vapor RF Plasma
- Finding Priorities of Circumscription Policy as a Skeptical Explanation in Abduction
- Simple and Efficient Adaptive Mesh Generation for Approximate Scalar Guided-Mode and Beam-Propagation Solutions (Special Issue on Computational Electromagnetics)
- Computational Electromagnetics Applied to Design and Modeling of Photonic Crystal Fibers
- 3-Dimensional Beam Propagation Analysis of Nonlinear Optical Fibers
- Limitations of Approximate Scalar Theory for 3-D Nonlinear Optical Waveguides
- Polynomial PAC Learnability of Learning Weights of Multi-objective Functions by Pairwise Comparison
- Learning Logic Programs Using Definite Equality Theories as Background Knowledge
- Novel Magnetic Random Access Memory Cell Consisting of Magnetic Tunnel Junction Connected in Parallel with Negative Differential Resistance Device
- Large Enhancement of Tunneling Magnetoresistance Ratio in Magnetic Tunnel Junction Connected in Series with Tunnel Diode
- Enhancement of Nitrogen Gas Breakdown Voltage between Coated Aluminum Electrodes with Fluorocarbon Polymer Film Prepared in C8F18 Vapor RF Plasma