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Department of electrical Engineering, National Cheng Kung University | 論文
- Pb(Mg_Nb_)O_3 Ceramics Produced by Modified Two-Stage Calcination Process
- Multi-Color Panel Based on a White Organic Light Emitting Diode with Color Filter
- High Efficiency White Organic Light-Emitting Diodes with Double-Doped in a Single Emissive Layer
- Influence of Calcining Temperature on CuO-Modified (Ba_Sr_)(Ti_Zr_)O_3 Ceramics
- High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double Delta-Doped Channels Heterostructures
- Electronic Transport in Graded-Period Delta-Doped Superlattice
- MBE Grown Undoped Superlattice Gate and Modulation-Doped Buffer Structure for Power FET Applications
- Electrical Properties Of Al_2O_3- and MnO_2-Doped Thick Film Resistors on AlN Substrates
- High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
- Effect of CuO Additives on Sintering and Microwave Dielectric Behaviors of 0.95Ba(Zn_Nb_)O_3-0.05BaZrO_3 Ceramics
- Effect of B_2O_3 Additives on Sintering and Microwave Dielectric Behaviors of CuO-Doped ZnNb_2O_6 Ceramics
- Low Temperature Sintering of P_2O_5-Added Cordierite Glass with Borosilicate Glass
- Microwave Dielectric Properties and Microstructure of 0.85MgTiO_3-0.15Ca_La_TiO_3 Dielectric Ceramics with Added Sintering Aids
- Deep Traps and Mechanism of Brightness Degradation in Mn-doped ZnS Thin-Film Electroluminescent Devices Grown by Metal-Organic Chemical Vapor Deposition
- The Improvement of Luminance Efficiency by the Insertion of Buffer layers in Flexible Organic Light-Emitting Diodes
- The Study of Organic Light Emitting Diode with a Doped Electron Transport Layer
- Reducing Interconnect Complexity for Efficient Path Metric Memory Management in Viterbi Decoders
- The Dielectric and Piezoelectric Properties of 0.125PMN-0.875PZT Ceramics Doped with 4PbO・B_2O_3
- Analysis and Simulation of Stacked-Segment Electromechanical Transducers with Partial Electrical Excitation by PSPICE
- Reduction of Ohmic Contact Resistance on n-GaN by Surface Treatment Using Cl_2 Inductively Coupled Plasma Following Laser Lift-Off