スポンサーリンク
Department of Research and Development, Nichia Chemical Industries, Ltd. | 論文
- High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50℃ with a Fundamental Transverse Mode
- InGaN/GaN/AlGaN-Based Laser Diodes Grown on GaN Substrates with a Fundamental Transverse Mode
- Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
- InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
- InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
- Cd-Doped InGaN Films Grown on GaN Films
- Si-Doped InGaN Films Grown on GaN Films
- P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
- Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
- Biexciton Luminescence from GaN Epitaxial Layers
- Evaluation of Band-Gap Energies and Characterization of Nonradiative Recombination Centers of Film and Bulk GaN Crystals
- Purification and Some Properties of Chitinase B1 from Bacillus circulans WL-12
- 2V-8 A Call Admission Control (CAC) Scheme Based on Cooperative Agents
- Ionic conduction and thermal nature of synthetic Cu_3BiS_3
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode : Semiconductors