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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface
- Theoretical Gain of Quantum-Well Wire Lasers
- Enhancement of Faraday Effect in Highly Ce-Substituted YIG Epitaxial Films by RF Sputtering
- p-Ga_Al_As/p-Ga_Al_yAs/n-Ga_Al_yAs Solar Cells : II-1: COMPOUND SOLAR CELLS
- Reaction between Lipid Hydroperoxide and Hemoglobin Studied by a Spectrophotometric and a Spin Trapping Method(Biological Chemistry)
- Magnetic Semiconductors and Heterostructures for Spin Electronics
- Electrical and Optical Control of Ferromagnetism in III-V Semiconductor Heterostructures at High Temperature (-100K)
- Electronic Structures of Si-Based Manmade Crystals
- Newly Designed Hg Cell for Molecular Beam Epitaxy Growth of CdHgTe
- Preparation of Microcrystalline Silicon Films by Very-High-Frequency Digital Chemical Vapor Deposition
- Malignant neoplasm in the axilla of a male : suspected primary carcinoma of an accessory mammary gland
- Metachronous secondary primary occult breast cancer initially presenting with metastases to the contralateral axillary lymph nodes : report of a case
- Primary Small-Cell Neuroendocrine Carcinoma of the Breast : Report of a Case
- Proposal of Trench-Oxide Metal-Oxide-Semiconductor Structure and Computer Simulation of Silicon Quantum-Wire Characteristics
- Preparation of YBa_2Cu_3O_x Thin Films by Layer-by-Layer Metalorganic Chemical Vapor Deposition
- Growth Mechanism of Microcrystalline Silicon Prepared by Alternating Deposition of Amorphous Silicon and Hydrogen Radical Annealing
- Nanometer Patterning by Electron Beam Lithography Using an Amorphous Carbon Film as an Intermediate Layer
- Excimer-Laser Annealing Technology for Hydrogenated Amorphous-Silicon Devices
- Photorefractive Properties of Ce-Doped Strontium Barium Niobate Single-Crystal Fibers at 830 nm
- Febrication of InP/GaInAs Double Heterojunction Bipolar Transistors with a 0.1-μm-Wide Emitter : Semiconductors