スポンサーリンク
Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan | 論文
- Effects of 1 MeV Electron Irradiation on the Schottky Diode Characteristics of n-GaAs/Si
- Fabrication of GaAs/Si Tandem Solar Cell by Epitaxial Lift-Off Technique
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
- Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-Type Si Heterojunction Diodes
- Ion Implantation Effects of Microcrystalline and Nanocrystalline Diamond Thin Films
- Photocatalytic Activity of Titanium Dioxide Coated with Apatite
- Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on $n$-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethylboron