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Department of Engineering and Applied Sciences, Sophia University | 論文
- Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns
- FRS-031 Additional Gene Modifiers Reduce Effectiveness of β-blockers in the Long QT Type 1 Syndrome(Arrhythmia-Basic : Molecular and Genetic : Basis (A) : FRS4)(Featured Research Session (English))
- Energy Saving Speed and Charge/discharge Control of a Railway Vehicle with On-board Energy Storage by Means of an Optimization Model
- Growth of Self-Organized GaN Nanostructures on Al_20_3(0001)by RF-Radical Source Molecular Beam Epitaxy
- Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
- Zn Induced Layer Disordering in GaInP/AlInP Visible Multi-Quantum Well Distributed Bragg Reflector Laser Diode
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- THE ROLE OF INTERLEUKIN-18 FOR APOPTOSIS IN THE MOUSE TESTIS
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Twin-Guide Laser with Narrow Radiation Angle
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- Stability and Feedback Design of a Class of Time-Delay Systems with Discontinuity : Functional Differential Inclusion-Based Approach
- New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector
- CW Operation of 0.67μm GaInAsP/AlGaAs Laser at 208 K Grown on GaAs Substrates by LPE
- Growth and Characterization of ZnCdSe/BeZnTeII-VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices : Semiconductors
- Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy : Semiconductors