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Department of Electronics and Information Engineering, Tokyo Metropolitan University | 論文
- PbTe熱電材料の比抵抗の温度履歴
- 傾斜機能構造化によるPb_Sn_xTeの熱電特性向上の可能性
- Grain Size Effect on Thermoelectric Properties of PbTe Prepared by Spark Plasma Sintering
- 焼結法と溶製法によるIrSb_3の熱電特性
- PbSnTe系化合物半導体溶製材料および焼結材料の熱電特性
- Evaluation of Thermoelectric Properties of Impurity-doped PbTe
- Size Effects on Photoacoustic Spectra for GaAs Fine Powder
- GaAs Schottky Diodes with Ideality Factor of Unity Fabricated by In Situ Photoelectrochemical Process
- Photovoltaic Properties of Sandwich Cells Prepared with Fluoroaluminium Phthalocyanine
- Stabilization of Photoluminescence of Porous Silicon with Nonaqueous Anodic Oxidation
- Characterization of Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy with n-i-n Structure
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Role of the EL2 Center on the Formatiorn of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs
- 電子冷却用n型Bi_2(SeTe)_3合金の遠赤外評価
- Scanning Internal-Photoemission Microscopy : New Mapping Technique to Characterize Electrical Inhomogeneity of Metal-Semiconductor Interface
- Improvement in Spatial Resolution of Infrared Scanning Internal-Photoemission Microscope
- Linear CDMA Detection Algorithm Based on Statistical Neurodynamics and Belief Propagation and the Stability Conditions
- Dominant Deep Level in Annealed Low-Temperature GaAs Layers Grown by Molecular Beam Epitaxy
- Simultaneous measurements of dynamical structure in the mesopause region with lidars and MU radar