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Department of Electronics, Nippondenso Technical College | 論文
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Humidity Sensor Using Surface Acoustic Wave Delay Line with Hygroscopic Dielectric Film
- Measurement of Humidity Using Surface Acoustic Wave Device
- Liquid Sensor Using Two-Port Surface Acoustic Wave Resonator : Ultrasonic Measurement
- Growth of Y_2O_2S:Eu Thin Films by Reactive Magnetron Sputtering and Electroluminescent Characteristics
- Characteristics of Y_2O_3:Eu/ZnS/Y_2O_3:Eu Red Light Emitting Electroluminescent Devices
- Structure and Luminescent Property of Y_2O_2S:Eu Thin Films Prepared by Magnetron Sputtering
- Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO_2 Patterns
- Characterization of Solid-Phase Epitaxially-Grown Silicon Films on SiO_2