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Department of Electronics, Nippondenso Technical College | 論文
- Control of Epitaxial Relation of GaAs Film on Fluoride/Si(111) Structure
- Effect of Substrate Off-Orientation on GaAs/CaF_2/Si(111) Structure with Rotational Twin
- Reduction of Point Defects in GaAs Films Grown on Fluoride/Si Structures by the 2-Step Growth Method
- Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- Theorem on the Expected Number of Zeros of a Sine Wave Plus Random Noise