スポンサーリンク
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan | 論文
- Epitaxial Growth of Ferromagnetic Silicide Fe3Si on Si(111) Substrate
- Nucleation Control in Solid-Phase Crystallization of a-Si/SiO2 by Local Ge Insertion
- Suppression of Floating Body Effects in Polycrystalline Silicon Thin-Film Transistor by Schottky Source/Drain Structure
- Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator
- Low-Temperature Formation of Poly-Si1-xGex ($x$: 0–1) on SiO2 by Au-Mediated Lateral Crystallization