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Department of Electronic and Science Engineering, Kyoto University, Kyoto 615-8510, Japan | 論文

• Strain-Induced Effects on the Electronic Band Structures in GaN/AlGaN Quantum Wells: Impact of Breakdown of the Quasicubic Approximation in GaN
• Homoepitaxy and Photoluminescence Properties of (0001) AlN
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)
• Homoepitaxy and Photoluminescence Properties of (0001) AlN
• Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC (0001)
• Effects of strong electron–hole exchange and exciton–phonon interactions on the exciton binding energy of aluminum nitride

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