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Department of Electronic Engineering, Nagoya University | 論文
- Photoconductivity Due to Inter-Valence Band Transition in p-Type Germanium
- Anisotropic Properties of Photon Drag Effect in p-type Germanium
- Photon-Drag Effect Due to the Transitions between Light-Hole Band and Split-Off Band in Ge
- Measurement of Subnanosecond Infra-Red Light Pulses by Photon-Drag Effect : Short Pulses of Light
- Improvements in Carrier-to-Noise-Ratio (CNR) of Lightwave Amplitude Modulated Vestigial-Sideband (AM-VSB) Transmission Systems by the Use of Optical Isolators
- Photon Drag Effect in Germanium
- Electron Beam Vacuum Lithography Using a Plasma Co-Polymerized MMA-TMT Resist