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Department of Electronic Engineering, Faculty of Engineering, University of Tokyo | 論文
- Dopant Segregation in Earth- and Space-Grown InP Crystals
- Liquid-Phase Epitaxial Growth of ZnSe on ZnTe Substrate
- Y-Ba-Co-O/Nb Tunnel Type Josephson Junctions
- Electrical Properties of La-Sr-Cu-O/Al Contact
- Optical Absorption in Amorphous Selenium in High Electric Fields
- Solution Growth of Highly Perfect Crystals of Zinc Telluride
- Photo-Induced Paramagnetic Resonance of Cr^+ in ZnSe
- InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
- Arsenic Pressure Dependence of Surface Diffusion of Ga on Nonplanar GaAs Substrates
- The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
- Characterization of SOS Films Grown with Amorphous Si Buffer Layers by MOS FET's
- Si Contamination in Epitaxial Boron Monophosphide
- Measurement of Specific Heat of Boron Monophosphide by AC Calorimetry
- Thermal Expansion Coefficient of Boron Monophosphide
- Proposal of and Numerical Simulation of HgCd_xTe Heterojunction Bipolar Transistors
- Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
- Microchannel Epitaxy of GaAs from Parallel and Nonparallel Seeds : Structure and Mechanical and Thermal Properties of Condensed Matter
- AlSb Compositional Nonuniformity Induced by Different Ga-Al Exchange Modes in the Melt Growth of Al_xGa_Sb
- Crystal Growth of CuGaS_2 from Te, Te-Cu and Te-Cu-S Solutions
- Second Harmonic Generation of Epitaxially-Grown GaN crystal