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Department of Electrical and Electronics Engineering, Sophia University | 論文
- 発話の困難な障害者のための声質変換・HMM音声合成を用いた日英音声合成システムの構築(音声合成・分析)
- The Use of Bronchofiberscopy for Diagnosis of Allergic Bronchopulmonary Aspergillosis
- Attenuation of Telomerase Activity by Hammerhead Ribozymes Targeting Human Telomerase RNA and Telomerase Reverse Transcriptase in Pancreatic Carcinoma Cells
- IS-47 The intraovarian ErbB system constitutes a family of heterogenously-regulated ligands of the epidermal growth factor : A possible role in the ovulatory process
- IS-61 Silencing of the human ovary-specific acidic protein gene suppresses steroid secretion by adrenocortical cells(Group8 Perinatology1,International Session)
- Intracellular Cytokine Patterns of Peripheral Blood T Cells as a Useful Indicator of Activeness of Crohn's Disease
- 発話の困難な障害者のための声質変換・HMM音声合成を用いた日英音声合成システムの構築(音声合成・分析)
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells
- A-8. Traumatic Pneumocephalus
- Inactivation of Rat Cytochrome P450 2D Enzyme by a Further Metabolite of 4-Hydroxypropranolol, the Major and Active Metabolite of Propranolol
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AIN Multiple Intermediate Layers
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy
- 日本人ALS患者のための日英バイリンガル音声合成システムの構築
- 日本人ALS患者のための日英バイリンガル音声合成システムの構築
- Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy : Semiconductors
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary Oil InP Substrates and Fabrication of Light Emitting Diodes
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates
- Substrate Misorientation Effect on Self-Organization of Quantum-Wires in (GaP)m/(InP)m Short Period Binary Superlattices
- 600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy