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Department of Electrical and Electronic Engineering | 論文
- CdS-doped glass as dosimetric material with electron spin resonance
- Dependence of photodarkening on alloy composition of CdSxSe_＜1-x＞ nanocrystals in glasses
- Laser-induced reversion of photodarkening in CdS-doped glass
- Effect of hydrogenation on photodarkening in CdS-doped glass
- Mechanism of Photodarkening Effects in CdS-Doped Glass
- ESR of photodarkened CdS-doped and undoped glasses
- Gated Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures
- Proposal for a Solid State Biprism Device
- Effects of light irradiation on fluorescence and optical reflectance of pearls
- A New Type of Tunnel-Effect Transistor Employing Internal Field Emission of Schottky Barrier Junction
- Numerical Simulation of Tunnel Effect Transistors Employing Internal Field Emission of Schottky Barrier Junction
- High-Field Electron Transport in a-Si:H
- Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors Using Titanium Disilicide Contacts for Source and Drain
- Three-Level Charge-Pumping Technique for Grain-Boundary Trap Evaluation in Polysilicon Thin Film Transistors
- Prevention of Oxygen Incorporation in poly-Si_Ge_x Deposition with Interfacial Amorphous Silicon Layer
- Characterization of Proximity Correction in 100-nm-Regime X-Ray Lithography
- Novel Sub-10nm Polymer Thin Film Resistance Switching Device
- Identification of Grain-Boundary Trap Properties Using Three-Level Charge-Pumping Technique in Polysilicon Thin-Film Transistors
- Orientational Re-ordering of Polar Organic Monolayers by Cooperative Molecular Field Effect