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Department of Electrical Engineering, Tsing-Hua University | 論文
- The Mechanism Responsible for a Low Electrostatic Discharge Failure Threshold of an Output Buffer Circuit with Low Current Drive Capability
- The Method to Optimize Gate Oxide Integrity, Hot Carrier Effect and Electro-Static Discharge without Sacrificing the Performance in Sub-Quarter Micron Dual Gate Oxide Process
- A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)-NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors
- Very Low Temperature Deposition of Polycrystalline Si Films Fabricated by Hydrogen Dilution with Electron Cyclotron Resonance Chemical Vapor Deposition
- Thin Film Transistors Made from Hydrogenated Microcrystalline Silicon
- Ion Implanted Grating Type Si Solar Cells : B-6: SOLAR CELLS AND AMORPHOUS DEVICES
- Thermodynamic Considerations of Vapor Epitaxial Growth of CuInS_2/GaP heterojunctions : CHALCOPYRITES : THIN FILMS AND JUNCTIONS