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Department of Electrical Engineering, Seoul National University | 論文
- Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
- Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
- Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
- A New Cell Structure for a DC PDP
- A New Cell Structure for a DC PDP
- Different Hydrogen Passivation Mechanisms between Low-Temperature and High-Temperature Poly-Si TFT's
- A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
- On Fair Window Control for TCP with ECN Using Congestion Level(Network)
- STABILITY OF AMORPHOUS SILICON TFT : UV EXPOSURE EFFECTS
- AMORPHOUS SILICON THIN FILM TRANSISTORS UNDER TEMPERATURE AND ELECTRICAL STRESS