Different Hydrogen Passivation Mechanisms between Low-Temperature and High-Temperature Poly-Si TFT's

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概要

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• We have investigated the different hydrogen passivation effects on low-temperature (LT) processed and high-temperature (HT) processed poly-Si thin-film transistors (TFT's). The hydrogen passivation on LT poly-Si TFT's results in the increase of the field-effect mobility and the decrease of the threshold voltage, while the hydro-genation increases the field-effect mobility and decreases the leakage current in HT poly-Si TFT's. The effective trap-state densities of LT poly-Si TFT before and after 5 h of hydrogenation are estimated at about 4×10^<12>/cm^2 and 1.5×10^<12>/cm^2, while those of HT poly-Si TFT are about 1.5×10^<12>/cm^2 and 1.2×10^<12>/cm^2, respectively. The activation energy of HT poly-Si TFT has been increased significantly in the off state with hydrogen passivation, whereas that of LT device has been decreased remarkably in the on state.

• 社団法人応用物理学会の論文
• 1995-02-28

著者

• CHOI Kwon-Young

  Department of Electrical Engineering, Seoul National University

• Choi Kwon-young

  Department Of Electrical Engineering Seoul National University

• Kim Young-sang

  Research Center For Thin Film Fabrication And Crystal Growing Of Advanced Materials Seoul National U

• Kan Min-Koo

  Department of Electrical Engineering, Seoul National University

• Kan Min-koo

  Department Of Electrical Engineering Seoul National University

関連論文

• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
• Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
• Different Hydrogen Passivation Mechanisms between Low-Temperature and High-Temperature Poly-Si TFT's

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