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Department of Electrical Engineering, Private Kung-San Institute of Technology and Commerce | 論文
- Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
- Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_/GaAs Pseudomorphic Transistors
- Effect of Collector-Base Barrier on GaInP/GaAs Double Heterojunction Bipolar Transistor and Further Improvement by Doping-Spike
- Modeling the DC Performance of Heterostructure-Emitter Bipolar Transistor
- Negative-Differential-Resistance (NDR) Superlattiee-Emitter Transistor