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Department of Electrical Engineering, Faculty of Engineering Osaka University | 論文
- Characterization of In_xGa_As_P_y Epitaxial Layers and Relation to Lattice Matching : B-5: COMPOUND SEMICONDUCTOR DEVICE TECHNOLOGY
- Non-Maxwellian Electron Distribution Function in n-GaAs Determined from Electric Field-Dependent Photoluminescence Spectrum
- Electrical and Optical Characteristic of Liquid Phase Epitaxial In_xGa_As
- Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals (Selected Topics in Semiconductor Physics) -- (Transport)
- Liquid Epitaxial Growth and Characterization of Cr-Doped In_xGa_As
- Energy Relaxation Effect of Hot Electrons in GaAs
- Relaxation Effects Due to Energy Loss and Intervalley Transfer of Hot Electrons in n-GaAs
- Velocity-Field Characteristics in III-V Mixed Crystals, GaSb_xAs_ and In_xGa_As
- Temperature Dependence of the Velocity-Field Characteristic in n-Type GaAs
- Microwave Measurement of the Velocity-Field Characteristics in n-Type Gallium Arsenide
- Temperature Dependence of the Velocity-Field Characteristics of n-Type Gallium Arsenide
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs_P_x
- Diffusion of Boron in Silicon through Oxide Layer
- On the Determination of Diffusion Coefficient of Boron in Silicon
- TEA CO2レ-ザ-によるプラズマフォ-カスの加熱
- TEA CO2レ-ザ-とプラズマの相互作用