Diffusion of Boron in Silicon through Oxide Layer

概要

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The diffusion of boron into silicon through thermally grown oxide layers has been studied by an open tube diffusion technique. The experimental data are interpreted by a two boundary diffusion model, and diffusion constant of boron in silicon oxide is determined at several temperatures. The diffusion constant obtained at 1150℃ is 1.2×10^<-16> cm^2/sec with an activation energy of ΔH=78 kcal/mol. An anomalous diffusion is observed at a high impurity vapour pressure and a series of experimental results suggests conversion of silicon oxide into a "glassy layer" of unknown composition.
社団法人応用物理学会の論文
1962-12-15