スポンサーリンク
Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan | 論文
- Laser Properties of Nonlinear Optical Benzal Barbituric Acid Crystals
- The Effects of Substrate Surface Treatments on Growth of a-Plane GaN Single Crystals Using Na Flux Method
- Coalescence Growth of Dislocation-Free GaN Crystals by the Na-Flux Method
- The Effects of Ba-Additive on Growth of a-Plane GaN Single Crystals Using Na Flux Method
- Observation of Strain Effects of SrTiO3 Thin Films by Terahertz Time-Domain Spectroscopy with a 4-Dimethylamino-N-methyl-4-stilbazolium Tosylate Emitter
- Effects of Solution Stirring on the Growth of Bulk GaN Single Crystals by Na Flux Method
- Effects of Solution Stirring on the Growth of Bulk GaN Single Crystals by Na Flux Method (Special Issue : Recent Advances in Nitride Semiconductors)