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Department of Electric and Computer Engineering Nagoya Institute of Technology | 論文
- Oscillation Modes of Oscillistors I : Uniform Magnetic Field.
- AlGaAs/GaAs Wavelength-Dividing Photodiode with Multi-Layer Filters Grown by MOCVD
- Schottky Barrier Height of Au/p-In_Ga_xAs_yP_ with Native Oxide
- Oscillation Modes of Oscillistors II : Locally Concentrated Magnetic Field
- Development of Mott Diode for FIR Detection
- A Direct Coupled Josephson Sampler
- Moving High-Field Domain and Current Saturation in Optically Excited n-InSb
- Tilt Deformation of Metalorganic Chemical Vapor Deposition Grown GaP on Si Substrate
- Optoelectronic Integrated Circuits Grown on Si Substrates (Special Issue on Opto-Electronics and LSI)
- A New Type VUV Detector with Plane Electrodes Deposited on a Crystalline Quartz
- Formation of Graphene-Containing Porous Carbon Film for Electric Double-Layer Capacitor by Pulsed Plasma Chemical Vapor Deposition
- First Demonstration of Al_xGa_As/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
- Characterization of Phosphorus-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells
- Defect Characterization of GaAs on Si Grown by MOCVD
- Effects of Thickness on Dislocations in GaP on Si Grown by Metalorganic Chemical Vapor Deposition
- Stress-Free GaAs on Si by Laser Pulse Irradiation
- Double-Walled Carbon Nanotubes-Incorporated Donor–Acceptor-Type Organic Photovoltaic Devices Using Poly(3-octylthiophene) and C60
- A CINERADIOGRAPHIC STUDY ON THE MOVEMENT OF THE SOFT PALATE DURING PHONATION OF SPEECH SOUNDS
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model