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Department of EE, University of South Carolina | 論文
- Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
- Serum Nutritional Status of Tocopherol and Retinol Normalized to Lipids of Persons Living in the Southern Rural Terai Region in Nepal
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Matrix Addressable Micro-Pixel 280nm Deep UV Light-Emitting Diodes
- Optically Pumped Lasing at 353nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire
- First Demonstration of Semipolar Deep Ultraviolet Light Emitting Diode on $m$-Plane Sapphire with AlGaN Multiple Quantum Wells
- Low Threshold-14 W/mm ZrO2/AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors