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Department of Applied Chemistry, Tokyo University of Agriculture and Technology | 論文
- Influence of the electron acceptor on nitrite reductase gene (nir) diversity in an activated sludge community(ENVIRONMENTAL BIOTECHNOLOGY)
- Nonlinear Magneto-Optical Studies of Magnetic Nano Structures Fabricated by Damascene Technique Using Electron Beam Lithography
- High Resolution 4d-4f Resonance Photoemission Spectroscopy of CePdX (X=As,Sb)
- Temperature-Dependent Change of Correlated Electronic States in Yb_4As_3 and Yb_4(As_Sb_x)_3 Probed by High Resolution Photoemission Spectroscopy
- X-Ray Diffraction Study on Smectic Liquid Crystal State of Dimyristoylphosphatidylcholine
- Isolated Gastric Varices Resulting from Iatrogenic Splenic Vein Occlusion : Report of a Case
- Isolated hepatic perfusion chemotherapy for unresectable malignant hepatic tumors
- 0.43 J, 10 Hz Fourth Harmonic Generation of Nd:YAG Laser Using Large Li2B407 Crystals : Optics and Quantum Electronics
- Far-Infrared Absorption Measurements of Polypeptides and Cytochrome c by THz Radiation
- Preparation of Alkenyl Sulfides by the Olefination of Thiolesters Using Thioacetals
- Elucidation of Sulfur Behavior on Alumina-Supported Ruthenium Sulfide-Cesium Catalysts Using Radioactive ^S as a Tracer
- Bulk 4f Electronic States of Ce-Based Heavy Fermion System Probed by High-Resolution Resonance Photoemission : Condensed Matter: Electronic Properties, etc.
- Memory Operation of Silicon Quantum-Dot Floating-GateMetal-Oxide-Semiconductor Field-Effect Transistors : Semiconductors
- Investigation of Hydrogen Chemisorption on GaAs(111)A Ga Surface by In Situ Monitoring and Ab Initio Calculation
- Trans→cis One-way Photoisomerization of an Olefin Substituted with an Indole and a Pyridine Ring. Effect of Intramolecular Hydrogen Bond
- Theoretical Investigation of Arsenic Desorption from GaAs(001) Surfaces under an Atmosphere of Hydrogen
- Self-Separation of a Thick AIN Layer from a Sapphire Substrate via Interfacial Voids Formed by the Decomposition of Sapphire
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN (0001) and (000^^1) Surfaces Using Freestanding GaN : Semiconductors
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors
- In Situ Gravimetric Monitoring of Decomposition Rate from GaN Epitaxial Surface