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Department Of Materials Engineering The University Of Tokyo | 論文
- Characteristics of Very High-Aspect-Ratio Contact Hole Etching
- Orientation Relationship in Fcc-Bcc Phase Transformation Kinetics of Iron : a Molecular Dynamics Study
- A Molecular Dynamics Study of Thermodynamic and Kinetic Properties of Solid-Liquid Interface for Bcc Iron
- Photoexcited Anisotropic Etching of Single-Crystalline Silicon
- Healthcare Chip for Checking Health Condition from Analysis of Trace Blood Collected by Painless Needle
- Interfacial Reactions between Oxygen Containing Fe and Al at the Onset of Liquid Fe Deoxidation by Al Addition
- Dispersion of Primary Inclusions of Ce_2O_3 and CeS in Fe-0.20 mass%C-0.02 mass%P Alloy
- Preparation of Amorphous Fluorinated Carbon Film Using Low Global-Warming Potential Gas, C4F6, by Plasma Enhanced Chemical Vapor Deposition
- UCST-Type Cononsolvency Behavior of Poly(2-methacryloxyethyl phosphorylcholine in the Mixture of Water and Ethanol)
- Dimension f Poly(2-methacryloyloxyethyl phosphorylcholine) in Aqueous Solutions with Various Ionic Strength
- An Easy Method for Fabricating TiO_2 Gel Photonic Crystals Using Molds and Highly Concentrated Alkoxide Solutions : Instrumentation, Measurement, and Fabrication Technology
- Formation and Morphology of Al_2O_3 Inclusions at the Onset of Liquid Fe Deoxidation by Al Addition
- Effect of Electric-Field-Induced Polarization on Positive Temperature Coefficient of Resistivity Characteristics of Semiconducting Barium Titanate Ceramics : Electrical Properties of Condensed Matter
- Influence of Crystal Orientation of Ru Under-Layer on Initial Growth of Copper Chemical Vapor Deposition
- TED-AJ03-275 A MOLECULAR DYNAMICS SIMULATION OF FORMATION PROCESS OF SWNTS IN CCVD METHOD
- ナノ構造体を用いた無標識検出
- Downstream Etching of Si and SiO_2 Employing CF_4/O_2 or NF_3/O_2 at High Temperature : Etching and Deposition Technology
- Efficient organic photovoltaic cells using hole-transporting MoO3 buffer layers converted from solution-processed MoS2 films
- Three-Step Positive Temperature Coefficient of Resistivity on (BaSb)(TiZr)O_3 Composite Ceramics with a Surface Barrier-Layer
- High-Rate and Smooth Surface Etching of Al_2O_3TiC Employing Inductively Coupled Plasma (ICP)