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Department Of Information Processing Tokyo Institute Of Technology | 論文
- Epitaxial Growth of BeZnSe on CaF_2/Si(111) Substrate : Semiconductors
- Theoretical Analysis of The threshold Current Density in BeMgZnSe Quantum-Well UltraViolet Lasers : Optics and Quantum Electronics
- An Inter-crystal Scatter Correction Method for DOI PET Image Reconstruction
- Temporal Integration for Wavelength Change of an Equal-luminance Single Pulse
- Trapping and Recormbination of Photogenerated Carriers in As-Growrn High-Temperature-Annealed and Light-Soaked a-Si:H
- Laser Patterning Method for Integrated Type a-Si Solar Cell Submodules
- Preparation and Properties of a-SiGe:H:F Films by a Glow Discharge Decomposition
- High-Performance a-SiGe Solar Cells Using a Super Chamber Method
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- Contrast Adaptation Effects under Interocular Suppression for Normal and Strabismic Observers
- Two-Dimensionally Self-Holding Deflection Mirror Using Surface Acoustic Wave Motor
- Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
- Stable, Metastable and Charged Dangling Bonds in Transient Light-Induced ESR of Undoped a-Si:H
- Irradiation-Temperature Dependence of the Light-Induced Effect in a-Si Solar Cells
- Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
- Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
- Approximation Algorithms for the Highway Problem under the Coupon Model
- Approximation Preserving Reductions among Item Pricing Problems
- Preparation and Properties of High-Quality a-Si Films with a Super Chamber : Separated Ultra-High Vacuum Reaction Chamber