スポンサーリンク
Department Of Electronics Faculty Of Engineering Tottori University | 論文
- 25pYR-10 BaTiO_3TSSG単結晶の伝導異常の広域温度特性(誘電体,領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))
- 25pYR-8 BaTiO_3単結晶の相転移での伝導異常のI-t測定からの解析(誘電体,領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))
- Throughput Measurement of a Multilayer-Coated Schwarzschild Objective Using Synchrotron Radiation
- A Hole Trap Center Related to the 2.361 eV Bound Exciton Emission in ZnTe Single Crystals
- X-Ray Photoelectron Spectroscopy Studies of 7 K-Phase Bi-System Single Crystals
- The Comparison of the Background Removal Methods in XPS Spectra
- XPS Studies of 80 K-Phase Bi-Sr-Ca-Cu-O Single Crystals
- LEED-AES Observations of 7 K- and 80 K-phase Bi-Sr-Ca-Cu-O Single Crystals
- A Micro-Quantitative AES Analysis Using SEM-SAM Apparatus : Applied to Ag/Si Interfaces on Si(111) and Si(100) Surfaces
- 25aZD-6 原子間力顕微鏡と構造解析によるBaTiO_3薄膜の伝導異常の解析(25aZD 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 25pYR-9 BaTiO_3格子不整合エピ薄膜の伝導異常の熱処理分極処理依存性(誘電体,領域10(誘電体, 格子欠陥, X線・粒子線, フォノン物性))
- 29pXK-7 格子不整合なBaTiO_3エピタキシャル膜の伝導の温度依存性(誘電体)(領域10)
- Thin Film Growth of Ag on KCI Studied by LEED-AES Experiments
- Fabrication of Nanoparticle Composite Porous Films Having Ultralow Dielectric Constant
- Highly Stable a-Si:H Films Deposited by Using Multi-Hollow Plasma Chemical Vapor Deposition
- Cluster-Suppressed Plasma Chemical Vapor Deposition Method for High Quality Hydrogenated Amorphous Silicon Films
- Effects of Gas Temperature Gradient, Pulse Discharge Modulation, and Hydrogen Dilution on Particle Growth in Silane RF Discharges
- 20pXA-11 強誘電体表面の本質的自由電子ホール層(招待講演,誘電体(BaTiO_3系・SrTiO_3系),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 領域10,5,8,3「誘電体の電子ダイナミクス」(第61回年次大会シンポジウムの報告)
- 29pYA-1 はじめに(29pYA 領域10,領域5,領域8,領域3合同シンポジウム:誘電体の電子ダイナミクス,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
スポンサーリンク