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Department Of Electrical Engineering National Taiwan Ocean University | 論文
- Hydrogen Sensor with Pd Nanoparticles upon an Interfacial Layer with Oxygen
- A Low-Voltage 4.6GHz Injection Locked Frequency Divider in Standard 1.8V 0.18μm Complementary-Metal-Oxide-Silicon Technology
- A Novel Current Control Pad for Electromagnetic Interference Solution
- Second Harmonic Generation in Barium Titanate Thin Films on Silica Glass by Corona Poling
- A Low-Voltage Complementary-Metal-Oxide-Silicon 4.4-GHz Voltage Control Oscillator Design
- The Study of Temperature Dependence of Second Harmonic Generation in Lead Lanthanum Titanate Thin Film by Corona Poling
- Temperature Dependent Polarized-Piezoreflectance Study of Near Direct Band Edge Interband Transitions of AlInP_2 : Optical Properties of Condensed Matter
- Direct-Gap Reduction and Valence-Band Splitting of Ordered Indirect-Gap AlInP_2 Studied by Polarized Piezoreflectance
- Direct Coherency Identification of Synchronous Generators in Taiwan Power System Based on Fuzzy c-Means Clustering(Soft Computing,Nonlinear Theory and its Applications)
- Second Harmonic Electroreflectance Study of AlGaAs-GaAs Asymmetric Triangular and Coupled Double Quantum Wells
- Influences of Interface Roughness Scattering on Asymmetric and/or Steplike Current-Voltage Characteristics of Resonant Tunneling Diodes
- A Low-Voltage High-Gain Quadrature Up-Conversion 5GHz CMOS RF Mixer
- Numerical Simulation and Experimental Realization of δ-doped Single Barrier Resonant Tunneling Diodes
- A high speed and robustness OFDM-based LEO transport architecture in Ka band (衛星通信)
- A Powerline Transmission Scheme in EEG Medical Signals(International Forum on Medical Imaging in Asia 2009 (IFMIA 2009))
- Design of a Deblocking Filter for Both Objective and Subjective Metrics
- Temperature Dependence of the Band-Edge Transitions of ZnCdBeSe
- A Low-Voltage 4.6 GHz Injection Locked Frequency Divider in Standard 1.8 V 0.18 μm Complementary-Metal–Oxide–Silicon Technology
- A Low-Voltage Complementary-Metal–Oxide–Silicon 4.4-GHz Voltage Control Oscillator Design
- Characterization of Graded Pulse-Doped Channel AlGaAs/InGaAs/GaAs Heterojunction Field-Effect Transistors