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Department Of Electrical And Electronics Engineering Kobe University | 論文
- SF_6/N_2混合ガスにおける固体絶縁体を持つ複合電極の放電特性
- 乾燥空気中における3針-平板電極のバリア放電とオゾン生成
- High-dose-rate Brachytherapy Combined with Long-term Hormonal Therapy for High-risk Prostate Cancer : Results of a Retrospective Analysis
- Intracavitary Brachytherapy for Carcinoma of the Uterine Cervix : Comparison of HDR (Ir-192) and MDR (Cs-137)
- Hydrogenated Amorphous Silicon/Crystalline Silicon Double Heterojunction X-Ray Sensor
- LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Characterization of Thermally-Induced Defects in CZ-Si by Room-Temperature Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Photoluminescence Characterization of Polycrystalline Si for Solar Cells : I-3: CHARACTERIZATION OF SOLAR CELLS
- Rapid Characterization of Solar Cell Performances : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- Deep Impurity Levels in InP LEC Crystals
- Bound Multiexciton Luminescence in Lithium-Doped Silicon
- Hall-Effect and Photoluminescence Measurements of Oxygen-Related Donors in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- Bandgap Energy of InGaAsP Quaternary Alloy
- Preparation and Properties of InGaAsP p-n Junction for Fabrication of Photodetectors in Optical Communication Systems : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Analysis of the Exciton Luminescence of Silicon for Characterization of the Content of Impurities
- Observation of Deep Impurity Levels in In_GA_As_P_
- Bound Multiexciton Luminescence in Boron-Doped Silicon: Excitation-Level Dependence and Recombination Kinetics