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Department Of Electrical And Electronic Engineering Tottori University | 論文
- A Multichannel System for Determination of Time Varying Spectral Line Profiles
- The association of protein S Tokushima-K196E with a risk of deep vein thrombosis
- P1-B-14 弾性表面波によるガラス基板上の高分子薄膜の物性評価(超音波物性・材料,ポスターセッション1(概要講演))
- Theoretical Model and Device Performance of CuInS_2 Thin Film Solar Cell
- Cu(In_Ga_x)S_2 Thin-Film Solar Cells with Efficiency above 12%, Fabricated by Sulfurization
- Cu(In_Ga_x)S_2 Thin Films Prepared by Sulfurization of Precursors Consisting of Metallic and Gallium Sulfide Layers
- CuIn (S_xSe_)_2 Thin Films by Sulfurization
- 研究ニュース 弾性表面波測定によるメチルセルロースゲルのずり弾性率測定
- Microscopic Analysis of the Degradation Mechanism of Gallium Arsenide Metal-Semiconductor Field-Effect Transistor
- Light Emission and Surface States Annealing on GaAs Metal Semiconductor Field-Effect Transistor
- Decrease in Surface States on GaAs Metal-Semiconductor Field-Effect Transistor by High Temperature Operation
- PD08 超音波顕微鏡を用いた炭酸カルシウム分散PVC評価について(ポスターセッションI)
- Investigation of Substrate-dependent Characteristics of SnO_2 Thin Films with Hall Effect, X-Ray Diffraction, X-Ray Photoelectron Spectroscopy and Atomic Force Microscopy Measurements
- Analysis of Surface States of Gallium Arsenide Metal Semiconductor Field-Effect Transistors using Drain Current Transients under Light Illumination
- Analysis of Gate Lag in GaAs Metal-Semiconductor Field-Effect Transistor Using Light Illumination
- Stabilization of Bluish-Green Luminescent Ce^ Centers by Rb Doping in SrS:Ce Thin Film Electroluminescent Devices : Electrical Properties of Condensed Matter
- Blue Emitting Eu^-Doped CaAl_2O_4 Phosphor Thin Films Prepared Using Pulsed Laser Deposition Technique with Post Annealing : Surfaces, Interfaces, and Films
- Near-UV Electroluminescence from a ZnCdSSe/ZnSSe Metal-Insulator-Semiconductor Diode on GaP Grown by Molecular Beam Epitaxy
- Photoluminescence Excitation Spectroscopy of the Lasing Transition in Zn_Cd_Se-ZnS_Se_ Multiple Quantum Wells
- Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System