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Department Of Electrical And Computer Engineering University Of California | 論文
- On Branch Labels of Parallel Components of the L-Section Minimal Trellis Diagrams for Binary Linear Block Codes
- 不均一誤り訂正のための3レベルBCH符号化8-PSK変調について
- 逐次復号法の繰り返し回数を減少させるための条件
- 新しい逐次軟判定復号法
- 線形ブロック符号のLセクション最簡トレリスダイアグラムの並列成分におけるラベル系列につ いて
- Effects of Anthracene Doping on Electrical and Light-Emitting Behavior of 8-Hydroxyquinoline-Aluminum-Based Electroluminescent Devices
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
- Compositional Dependence of Nonpolar m-Plane In_xGa_N/GaN Light Emitting Diodes
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes
- Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
- Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations
- Si delta-doped m-plane AIGaN/GaN heterojunction field-effect transistors
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)