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Department Of Electrical And Computer Engineering Nagoya Institute Of Technology | 論文
- Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
- Study of Threading Dislocations in Wurtzite GaN Films Grown on Sapphire by Metalorganic Chemical Vapor Deposition
- Surface Pretreatment of Bulk GaN for Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition
- Fabrication of High-Output-Power AlGaN/GaN-Based UV-Light-Emitting Diode Using a Ga Droplet Layer
- IPD-1151T (Suplatast Tosilate) Inhibits Interleukin (IL)-13 Release but Not IL-4 Release From Basophils
- A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas
- p-Channel AlGaAs/GaAs Heterostructure FETs Employing Two-Dimensional Hole Gas
- Spinal Granulocytic Sarcoma Manifesting as Radiculopathy in a Nonleukemic Patient
- Congestive Myelopathy Due to Cervical Perimedullary Arteriovenous Fistula Evaluated by Apparent Diffusion Coefficient Values : Case Report
- Characterization and Performance of High-Frequency Pulse Transmission for Human Body Area Communications(Human-Body-Area Communication,2nd Pan-Pacific EMC Joint Meeting-PPEMC'06-)
- Domain Observation in Pb[(Zn_Nb_)O_3-PbTiO_3 Mixed Crystals
- -236- PERCUTANEOUS TRANSLUMINCAL CORONARY ANGIOPLASTY (PTCA) IN POOR SURGICAL CANDIDATES : PTCA, CABG : FREE COMMUNICATIONS(II) : PROCEEDINGS OF THE 51th ANNUAL SCIENTIFIC MEETING OF THE JAPANESE CIRCULATION SOCIETY
- Production Characteristics of Fullerenes by Means of the J × B Arc Discharge Method(Nuclear Science, Plasmas, and Electric Discharges)
- Suzaku Detection of Extended/Diffuse Hard X-Ray Emission from the Galactic Center
- Hard X-Ray Investigation of the Galactic Center Region with Suzaku(Chapter 5. The Galactic Center and Ridge Emissions, The Extreme Universe in the Suzaku Era)
- Discovery of a Possible X-Ray Counterpart to HESS J1804-216
- Effects of Anthracene Doping on Electrical and Light-Emitting Behavior of 8-Hydroxyquinoline-Aluminum-Based Electroluminescent Devices
- Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces, and Films
- Preparation of Conductive and Transparent Thin Films by Argon Ion Beam Sputtering of Zinc Oxide in Atmosphere Containing Hydrogen
- High Energy Spectroscopy of Thin Films of Chalcopyrite Structure Cu-In-Se and Related Materials