スポンサーリンク
Department Of Ee University Of South Carolina | 論文
- Stable High-Brightness Electron Beam System with a Photocathode RF Gun for Short Pulse X-Ray Generation by Thomson Scattering
- Short-Pulse X-Ray Generation via Thomson Scattering in 0° and 90° Interactions
- Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm : Semiconductors
- AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor : Semiconductors
- Room-Temperature Stimulated Emission from AlN at 214nm
- Low Threshold-14W/mm ZrO_2/AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors
- 10Milliwatt Pulse Operation of 265nm AlGaN Light Emitting Diodes
- Planar Schottky Diodes on High Quality A-plane GaN
- Serum Nutritional Status of Tocopherol and Retinol Normalized to Lipids of Persons Living in the Southern Rural Terai Region in Nepal
- 280nm Deep Ultraviolet Light Emitting Diode Lamp with an AlGaN Multiple Quantum Well Active Region
- Vertical Injection Thin Film Deep Ultraviolet Light Emitting Diodes with AlGaN Multiple-Quantum Wells Active Region
- Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-ALGaN Multiple Quantum Wells
- A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire
- Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
- Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates
- Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission
- 324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors
- Submilliwatt Operation of AllnGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate : Semiconductors
- Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells : Semiconductors
- Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors