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Department Of Computer Science And Electronics Kyushu Institute Of Technology | 論文
- Novel Wire Transistor Structure with In-Plane Gate Using Direct Schottky Contacts to 2DEG
- Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process
- Depletion Characteristics of Direct Schottky Contacts to Quantum Wells Formed by In Situ Selective Electrochemical Process
- Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)
- Vibrational Modes of C_ Fullerene on Si(111)7×7 Surface : Estimation of Charge Transfer from Silicon Dangling Bonds to C_ Molecules
- Time-Division Multiplexing Realizations of Multiple-Output Functions Based on Shared Multi-Terminal Multiple-Valued Decision Diagrams (Special Issue on Multiple-Valued Logic and Its Applications)
- A new carrier frequency offset and I/Q imbalance compensation for MIMO OFDM (モバイルマルチメディア通信)
- Humidity Sensor Using Surface Acoustic Wave Delay Line with Hygroscopic Dielectric Film
- Measurement of Humidity Using Surface Acoustic Wave Device
- Liquid Sensor Using Two-Port Surface Acoustic Wave Resonator : Ultrasonic Measurement
- Applicability of TiN Adhesion Layer Formed by Nitridation of Sputtered Ti Film to Blanket CVD-W Contact Filling
- P2-32 Load Characteristics of a Diagonally Symmetric Form Ultrasonic Motor Using a LiNbO_3 Plate(Poster session 2)
- Void free at Interface of the SiC Film and Si Substrate
- Fabrication of Nanoscale Cubic SiC Particle Film
- Compositional Changes of SiC/Si Structure during Vacuum Annealing
- Activation Energy of Nanoscale 3C-SiC Island Growth on Si Substrate
- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
- Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate