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Department Of Applied Quantum Physics And Nuclear Engineering Graduate School Of Engineering Kyushu | 論文
- Determination of overall perturbation factors for parallel-plate ionization chambers in electron beams
- Determination of Cavity-Gas Calibration and Replacement Correction Factors for Markus Parallel-Plate Ionization Chamber Applied in Electron Beams
- Design and Synthesis of β-Secretase Inhibitors Containing Hydroxymethylcarbonyl Isostere as a Transition State Mimic
- Simulation of Three-dimensional Convection Patterns in a Rayleigh-Benard System Using the MPS Method
- Effect of Moxibustion Guanyuan (関元, CV4) on the Hypothalamus-Pituitary-Thyroid Axis and Interleukin-2 of Senile Rats
- Effects of Acceptor Structure on Charge-Transfer Complexation in Aqueous Polyelectrolyte Solution
- Charge-Transfer Complexation in an Aqueous Polyelectrolyte Solution. III. Complexation between Pyrenesulfonate or Anthracenesulfonate and Anthraquinonesulfonate Ions
- Effects of Polyelectrolytes on the Complexation between Pyrenesulfonate and Anthraquinonesulfonate Ions
- Study on Temperature Dependence of Output Voltage of Electrochemical Detector for Environmental Neutrinos
- Design and Synthesis of Highly Active β-Secretase (BACE1) inhibitors, KMI-420 and KMI-429, with Enhanced Chemical Stability
- Dark-field transmission electron microscopy for a tilt series of ordering alloys : toward electron tomography
- X-Ray Photoemission Spectra of S 2s Core Level in the Charge-Transfer Type Mixed Metallic System : (Co_Ni_x)_S
- X-Ray Photoemission Spectroscopic Study on the Electronic States in the Mixed System between Charge-Transfer and Mott-Hubbard Type Metals : Co_S and V_S
- Dynamic Behavior of a Solid Particle Bed in a Water Pool
- Oxidations of Dihydroxyalkanoates to Vicinal Tricarbonyl Compounds with a 4-BzoTENPO-Sodium Bromite System or by Indirect Electrolysis Using 4-BzoTEMPO and Bromide Ion
- Inelastic Alpha-Particle Scattering on Copper 65 at 29 MeV
- A Consideration of the Deformation of Rectangular Pattern : Lithography Technology
- The Resolution Limit of the Resist Silylation Process in I-Line Lithography : Lithography Technology
- The Resolution Limit of the Resist Silylation Process in i-Line Lithography
- A Consideration of the Deformation of Rectangular Pattern