The Resolution Limit of the Resist Silylation Process in i-Line Lithography

スポンサーリンク

概要

• 論文の詳細を見る

• The resolution limit of the resist silylation process in an i-line stepper was considered. The method was developed to render the silylated layer visible and was applied to measure the thickness of the siIy7ated layer. The silylated profile is compared with the exposure energy profile and there is good agreement. This result indicates that the degradation of contrast in the silylation is negligible. The dry development process does not limit the resolution because no microloading effect is observed down to the 0.25-μm slit. The degradation of contrast due to optical diffraction is concluded to be essential for determining the resolution. The resolution limit of 0.35 μm in 0.75-μn resist thickness is demonstrated by simulation and experiment.

• 社団法人応用物理学会の論文
• 1991-01-15

著者

• Shibayama H

  Integrated Circuit Group Sharp Corporation

• Kawabata Ryohei

  Department Of Applied Quantum Physics And Nuclear Engineering Graduate School Of Engineering Kyushu

• OTA Tsuneo

  Integrated Circuit Group, SHARP Corporation

• TANIMOTO Keisuke

  Integrated Circuit Group, SHARP Corporation

• KAWABATA Ryohei

  Integrated Circuit Group, SHARP Corporation

• SHIBAYAMA Hikou

  Integrated Circuit Group, SHARP Corporation

• TAKEHARA Daisuke

  Integrated Circuit Group, SHARP Corporation

• Kawabata Ryohei

  Integrated Circuit Group Sharp Corporation

• Shibayama Hikou

  Integrated Circuit Group Sharp Corporation

• Ota Tsuneo

  Integrated Circuit Group Sharp Corporation

• Tanimoto Keisuke

  Integrated Circuit Group Sharp Corporation

• Takehara Daisuke

  Integrated Circuit Group Sharp Corporation

関連論文

• A Suspected [^F]Fluorodeoxyglucose Positron Emission Tomography-Negative Metastatic Lymph Node Successfully Diagnosed by Laparoscopic Staging in Esophageal Cancer : Report of Two Cases
• Spectral Analysis of Ultraweak Chemiluminescence from Kidney Bean Leaf Infested with Tetranychus Kanzawai Kishida
• Biophoton Emission Due to Drought Injury in Red Beans : Possibility of Early Detection of Drought Injury
• A Consideration of the Deformation of Rectangular Pattern : Lithography Technology
• The Resolution Limit of the Resist Silylation Process in I-Line Lithography : Lithography Technology
• The Resolution Limit of the Resist Silylation Process in i-Line Lithography
• A Consideration of the Deformation of Rectangular Pattern

スポンサーリンク