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Chunghwa Telecom Co. Ltd. Taoyuan Twn | 論文
- Improvement of Current Injection of Porous Silicon
- Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
- Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe Film
- Improvement of Current Injection of Porous Silicon
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
- Temperature Dependent Polarized-Piezoreflectance Study of Near Direct Band Edge Interband Transitions of AlInP_2 : Optical Properties of Condensed Matter
- Direct-Gap Reduction and Valence-Band Splitting of Ordered Indirect-Gap AlInP_2 Studied by Polarized Piezoreflectance
- Analysis of an ATM Multiplexer with Correlated Real-Time and Independent Non-real-time Traffic
- On a High-Ranking Node of B-ISDN
- High Speed F-N Operated Volatile Memory Cell with Stacked Plasma Enhanced Chemical Vapor Deposition (PECVD) Nanocrystalline Si Layer Structure