スポンサーリンク
Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578, Japan | 論文
- Effects of Silicon Source Gas and Substrate Bias on the Film Properties of Si-Incorporated Diamond-Like Carbon by Radio-Frequency Plasma-Enhanced Chemical Vapor Deposition
- Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition
- Thin-Film Deposition of Silicon-Incorporated Diamond-Like Carbon by Plasma-Enhanced Chemical Vapor Deposition Using Monomethylsilane as a Silicon Source
- Growth of GaN Films by Hot-Mesh Chemical Vapor Deposition Using Ruthenium-Coated Tungsten Mesh