スポンサーリンク
Center for Spintronics Integrated Systems, Tohoku University | 論文
- Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers
- Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions (Special Issue : Dry Process)
- Dependence of Magnetic Anisotropy in Co_Fe_B_ Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis
- Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory
- Electric Field Effect on Magnetization of an Fe Ultrathin Film
- High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
- Size Dependence of Magnetic Properties of Nanoscale CoFeB--MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance
- 27pXA-6 Current pulse width dependence of magnetic domain wall motion in the presence of bias magnetic field
- Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications
- A 71%-Area-Reduced Six-Input Nonvolatile Lookup-Table Circuit Using a Three-Terminal Magnetic-Tunnel-Junction-Based Single-Ended Structure
- Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs