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Center for Crystal Science and Technology, University of Yamanashi | 論文
- Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
- Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
- 1/f Fluctuations in LiCl Solution
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
- Effect of Molecular Structure of Chiral Fluorinated Compounds on Spontaneous Polarization of Ferroelectric Liquid Crystals
- Tilt Angle Behavior of Smectic C Phase in Binary Systems
- Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
- Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum
- Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
- Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
- Formation Kinetics of Chemically Vapor-Deposited Carbon on Mesoporous Silica
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication