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Center For Interdisciplinary Research Tohoku University | 論文
- High Upcomversion Intensity of Er^ in a LaF_3 Thin Film on CaF_2 (111)Grown by the Molecular Beam Epitaxy Method
- Epitaxial Growth of Er^ -Doped CaF_2 by Molecular Beam Epitaxy
- Formation of Icosahedral Quasicrystalline Phase in Zr-Al-Ni-Cu-M (M=Ag, Pd, Au or Pt) Systems
- 27aYG-8 再成長界面を基点に形成されるAlGaAs中の双晶の光学特性(化合物・輸送・アモルファス・不純物)(領域4)
- Hydrogen-Controlled Crystallinity of 3C-SiC Film on Si(001) Grown with Monomethylsilane
- Scanning-Tunneling Microscopy Observation of Monomethylsilane Adsorption on Si(111)-7×7
- Ge-Dot Formation on Si(111)-7 × 7 Surface with C Predeposition Using Monomethylsilane
- Nucleation of Oxides during Dry Oxidation of Si(001)-2 × 1 Studied by Scanning Tunneling Microscopy
- Empirical Potential Approach to the Formation of 3C-SiC/Si(110)
- Nanoquasicrystallization in Metallic Glasses
- Preparation and Electrochemical Properties of the Green Ytterbium (III) and Lutetium (III) Sandwich Complexes of Octabutoxy-Substituted Phthalocyanine
- X-Ray Photoelectron Spectroscopy of Si-As-Te Chalcogenide Glasses Prepared in the Earth's Gravity and in Microgravity
- Valence Band Structure of Si-As-Te Chalcogenide Glasses Prepared in the Gravity Environment of the Earth and in a Microgravity Environment in Space
- Pressure Effects on Electrical and Optical Properties of Si-As-Te Chalcogenide Glasses Fabricated in the Gravity Environment and in a Microgravity Environment
- Anomalous Splitting of ^1H-NMR Spectra in λ-(BEDT-TSF)_2FeCl_4
- Study on Quantum Electro-Dynamics in Vertical MOSFET
- Characteristics of Metal Gate GOI-MOSFET with High-k Gate Dielectric Fabricated by Ge Condensation Method
- Importance of the Electronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
- 3P247 アミノ酸を添加した酸性あるいは中性ゲル間界面におけるイオン伝導と水素化アモルファスシリコン膜(生体膜・人工膜輸送,第48回日本生物物理学会年会)
- 3P-178 水素化アモルファスシリコン薄膜上のジミリストイルフォスファチジルコリン・バクテリオロドプシン複合薄膜のIRRAS解析(生体膜・人工膜-構造・物性,第47回日本生物物理学会年会)